OSEN-Single FETs, MOSFETs-OSPH12N65

Description

Drain to Source Voltage;650V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Pd - Power Dissipation;155W/RDS(on);620mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);24.8pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.1nF/Output Capacitance(Coss);205pF


650V 12A 155W Through Hole TO-262

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Pd - Power Dissipation;155W/RDS(on);620mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);24.8pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.1nF/Output Capacitance(Coss);205pF650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);42nC@10V/Number;1 N-channel/Pd - Power Dissipation;155W/RDS(on);620mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);24.8pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.1nF/Output Capacitance(Coss);205pF


    650V 12A 155W Through Hole TO-262

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