OSEN-Single FETs, MOSFETs-TK11A65D

Description

Drain to Source Voltage;650V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);540mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.8nF/Output Capacitance(Coss);160pF


650V 540mΩ@10V 1 N-channel 45W TO-220F Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);540mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.8nF/Output Capacitance(Coss);160pF650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);35nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);540mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2.8nF/Output Capacitance(Coss);160pF


    650V 540mΩ@10V 1 N-channel 45W TO-220F Single FETs, MOSFETs RoHS

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