PANJIT-Single FETs, MOSFETs-PJD100P03_L2_00001

Description

Drain to Source Voltage;30V/Gate Charge(Qg);107nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2W;104W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);15.8A;100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.067nF


30V 4.5mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);107nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2W;104W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);15.8A;100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.067nF30V 4.5mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);107nC@10V/Number;1 P-Channel/Pd - Power Dissipation;2W;104W/RDS(on);4.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);15.8A;100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;6.067nF


    30V 4.5mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS

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