PANJIT-Single FETs, MOSFETs-PJD10N10_L2_00001

Description

Drain to Source Voltage;100V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;34.7W/RDS(on);130mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);2.6A;34.7A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;707pF


100V 130mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;34.7W/RDS(on);130mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);2.6A;34.7A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);12nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;34.7W/RDS(on);130mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);2.6A;34.7A/Gate Threshold Voltage (Vgs(th));3.5V/Ciss-Input Capacitance;707pF


    100V 130mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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