PANJIT-Single FETs, MOSFETs-PJD35N06A-AU_L2_000A1

Description

Drain to Source Voltage;60V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.3W;75W/RDS(on);21mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);4.7A;35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.68nF


60V 21mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.3W;75W/RDS(on);21mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);4.7A;35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.3W;75W/RDS(on);21mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);4.7A;35A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.68nF


    60V 21mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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