PANJIT-Single FETs, MOSFETs-PJD60R620E_L2_00001

Description

Drain to Source Voltage;600V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;78W/RDS(on);620mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1.2A;7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;457pF


600V 620mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;600V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;78W/RDS(on);620mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1.2A;7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;457pF600V 620mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;78W/RDS(on);620mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);1.2A;7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;457pF


    600V 620mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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