PANJIT-Single FETs, MOSFETs-PJD70P03_L2_00001

Description

Drain to Source Voltage;30V/Gate Charge(Qg);27nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W;63W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A;70A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.228nF


30V 8.5mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);27nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W;63W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A;70A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.228nF30V 8.5mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);27nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W;63W/RDS(on);8.5mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);11A;70A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.228nF


    30V 8.5mΩ@10V 1 P-Channel TO-252 Single FETs, MOSFETs RoHS

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