PANJIT-Single FETs, MOSFETs-PJD90N03_L2_00001

Description

Drain to Source Voltage;30V/Gate Charge(Qg);35nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2W;100W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);20A;90A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.305nF


30V 2.6mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);35nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2W;100W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);20A;90A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.305nF30V 2.6mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);35nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2W;100W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);20A;90A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;4.305nF


    30V 2.6mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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