PANJIT-Single FETs, MOSFETs-PJE8406_R1_00001

Description

Drain to Source Voltage;20V/Gate Charge(Qg);920pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);400mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;50pF


20V 400mΩ@4.5V 1 N-channel 350mW SOT-523 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);920pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);400mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);920pC@4.5V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);400mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);800mA/Gate Threshold Voltage (Vgs(th));400mV/Ciss-Input Capacitance;50pF


    20V 400mΩ@4.5V 1 N-channel 350mW SOT-523 Single FETs, MOSFETs RoHS

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