PANJIT-Single FETs, MOSFETs-PJQ1916_R1_00201

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);300mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);950mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;46pF


20V 300mΩ@4.5V 1 N-channel 500mW DFN1006-3 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);300mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);950mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;500mW/RDS(on);300mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);13pF/Current - Continuous Drain(Id);950mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;46pF


    20V 300mΩ@4.5V 1 N-channel 500mW DFN1006-3 Single FETs, MOSFETs RoHS

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