PANJIT-Single FETs, MOSFETs-PJQ5413_R2_00001

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W;30W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);93pF/Current - Continuous Drain(Id);6.5A;25A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;870pF


30V 30mΩ@10V 1 P-Channel DFN5060-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);7.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W;30W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);93pF/Current - Continuous Drain(Id);6.5A;25A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;2W;30W/RDS(on);30mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);93pF/Current - Continuous Drain(Id);6.5A;25A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;870pF


    30V 30mΩ@10V 1 P-Channel DFN5060-8 Single FETs, MOSFETs RoHS

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