/Gate Charge(Qg);34nC@10V/Type;P-Channel/Pd - Power Dissipation;43W/RDS(on);12.1mΩ@10V/Operating Temperature -;-55℃~+175℃/Current - Continuous Drain(Id);47A/Gate Threshold Voltage (Vgs(th));2.5V12.1mΩ@10V 43W DFN5060-8 Single FETs, MOSFETs RoHS Read more

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