PANJIT-Single FETs, MOSFETs-PJQ5440_R2_00001

Description

Drain to Source Voltage;40V/Gate Charge(Qg);50nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2W;70W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17A;100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.214nF


40V 2.8mΩ@10V 1 N-channel DFN5060-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);50nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2W;70W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17A;100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.214nF40V 2.8mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);50nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;2W;70W/RDS(on);2.8mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);17A;100A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.214nF


    40V 2.8mΩ@10V 1 N-channel DFN5060-8 Single FETs, MOSFETs RoHS

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