PANJIT-Single FETs, MOSFETs-PJQ5458A_R2_00001

Description

Drain to Source Voltage;60V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;27W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.4A;16A/Gate Threshold Voltage (Vgs(th));1.77V/Ciss-Input Capacitance;815pF


60V 50mΩ@10V 1 N-channel DFN5060-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;27W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.4A;16A/Gate Threshold Voltage (Vgs(th));1.77V/Ciss-Input Capacitance;815pF60V 50mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);14nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W;27W/RDS(on);50mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.4A;16A/Gate Threshold Voltage (Vgs(th));1.77V/Ciss-Input Capacitance;815pF


    60V 50mΩ@10V 1 N-channel DFN5060-8 Single FETs, MOSFETs RoHS

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