PANJIT-Single FETs, MOSFETs-PJS6404_S1_00001

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);34pF/Current - Continuous Drain(Id);6.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;343pF


30V 32mΩ@10V 1 N-channel 2W SOT-23-6 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;30V/Gate Charge(Qg);7.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);34pF/Current - Continuous Drain(Id);6.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7.8nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W/RDS(on);32mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);34pF/Current - Continuous Drain(Id);6.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;343pF


    30V 32mΩ@10V 1 N-channel 2W SOT-23-6 Single FETs, MOSFETs RoHS

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