PANJIT-Single FETs, MOSFETs-PJW2P10A_R2_00001

Description

Drain to Source Voltage;100V/Gate Charge(Qg);8nC@10V/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);650mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);21pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;448pF


100V 650mΩ@10V 1 P-Channel 3.1W SOT-223 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);8nC@10V/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);650mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);21pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);8nC@10V/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);650mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);21pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;448pF


    100V 650mΩ@10V 1 P-Channel 3.1W SOT-223 Single FETs, MOSFETs RoHS

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