PANJIT-Single FETs, MOSFETs-PJW4P06A_R2_00001

Description

Drain to Source Voltage;60V/Gate Charge(Qg);10nC@10V/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);112pF/Current - Continuous Drain(Id);4A/Ciss-Input Capacitance;785pF


60V 110mΩ@10V 1 P-Channel 3.1W SOT-223 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);10nC@10V/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);112pF/Current - Continuous Drain(Id);4A/Ciss-Input Capacitance;785pF60V 110mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);10nC@10V/Number;1 P-Channel/Pd - Power Dissipation;3.1W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);112pF/Current - Continuous Drain(Id);4A/Ciss-Input Capacitance;785pF


    60V 110mΩ@10V 1 P-Channel 3.1W SOT-223 Single FETs, MOSFETs RoHS

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