PANJIT-Single FETs, MOSFETs-PJX8808

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC@4.5V/Type;N-Channel/Pd - Power Dissipation;300mW/RDS(on);400mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;67pF


20V 400mΩ@4.5V 300mW SOT-563 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC@4.5V/Type;N-Channel/Pd - Power Dissipation;300mW/RDS(on);400mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;67pF20V 400mΩ@4.5V 300mW SOT-563... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC@4.5V/Type;N-Channel/Pd - Power Dissipation;300mW/RDS(on);400mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);500mA/Gate Threshold Voltage (Vgs(th));900mV/Ciss-Input Capacitance;67pF


    20V 400mΩ@4.5V 300mW SOT-563 Single FETs, MOSFETs RoHS

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