PN Junction Semiconductor-Single FETs, MOSFETs-P3M06025K4

Description

Drain to Source Voltage;650V/Gate Charge(Qg);146nC@15V/Number;1 N-channel/Pd - Power Dissipation;440W/RDS(on);34mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);15.8pF/Current - Continuous Drain(Id);97A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;5.378nF


650V 34mΩ@15V 1 N-channel 440W TO-247-4L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);146nC@15V/Number;1 N-channel/Pd - Power Dissipation;440W/RDS(on);34mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);15.8pF/Current - Continuous Drain(Id);97A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

$126.27 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);146nC@15V/Number;1 N-channel/Pd - Power Dissipation;440W/RDS(on);34mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);15.8pF/Current - Continuous Drain(Id);97A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;5.378nF


    650V 34mΩ@15V 1 N-channel 440W TO-247-4L Single FETs, MOSFETs RoHS

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