PN Junction Semiconductor-Single FETs, MOSFETs-P3M06060G7

Description

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;159W/RDS(on);79mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);15.3pF/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;1.911nF


650V 79mΩ@15V 1 N-channel 159W D2PAK-7 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;159W/RDS(on);79mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);15.3pF/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;1.911nF650V... Read more

$78.30 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;159W/RDS(on);79mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);15.3pF/Current - Continuous Drain(Id);44A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;1.911nF


    650V 79mΩ@15V 1 N-channel 159W D2PAK-7 Single FETs, MOSFETs RoHS

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