PN Junction Semiconductor-Single FETs, MOSFETs-P3M06060L8

Description

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;156W/RDS(on);79mΩ@15V/Reverse Transfer Capacitance (Crss@Vds);8.3pF/Current - Continuous Drain(Id);37A/Gate Threshold Voltage (Vgs(th));2.4V


650V 79mΩ@15V 1 N-channel 156W Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;156W/RDS(on);79mΩ@15V/Reverse Transfer Capacitance (Crss@Vds);8.3pF/Current - Continuous Drain(Id);37A/Gate Threshold Voltage (Vgs(th));2.4V650V 79mΩ@15V 1 N-channel... Read more

$78.30 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;156W/RDS(on);79mΩ@15V/Reverse Transfer Capacitance (Crss@Vds);8.3pF/Current - Continuous Drain(Id);37A/Gate Threshold Voltage (Vgs(th));2.4V


    650V 79mΩ@15V 1 N-channel 156W Single FETs, MOSFETs RoHS

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