PN Junction Semiconductor-Single FETs, MOSFETs-P3M06300T3

Description

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;35W/RDS(on);500mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);3.35pF/Gate Threshold Voltage (Vgs(th));2.2V


650V 500mΩ@15V 1 N-channel 35W TO-220-2L Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;35W/RDS(on);500mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);3.35pF/Gate Threshold Voltage (Vgs(th));2.2V650V 500mΩ@15V 1 N-channel 35W... Read more

$23.73 Excl. VAT

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    Description

    Drain to Source Voltage;650V/Number;1 N-channel/Pd - Power Dissipation;35W/RDS(on);500mΩ@15V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);3.35pF/Gate Threshold Voltage (Vgs(th));2.2V


    650V 500mΩ@15V 1 N-channel 35W TO-220-2L Single FETs, MOSFETs RoHS

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