REASUNOS-Single FETs, MOSFETs-RS11N45F

Description

Drain to Source Voltage;450V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);490mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;750pF/Output Capacitance(Coss);70pF


450V 490mΩ@10V 1 N-channel 45W TO-220F Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;450V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);490mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;450V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Pd - Power Dissipation;45W/RDS(on);490mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;750pF/Output Capacitance(Coss);70pF


    450V 490mΩ@10V 1 N-channel 45W TO-220F Single FETs, MOSFETs RoHS

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