REASUNOS-Single FETs, MOSFETs-RS150N160T

Description

Drain to Source Voltage;150V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;425W/RDS(on);6.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.5pF/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;4.3nF/Output Capacitance(Coss);530pF


150V 160A 425W Through Hole TO-220

Product form

Drain to Source Voltage;150V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;425W/RDS(on);6.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.5pF/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;150V/Gate Charge(Qg);68nC@10V/Number;1 N-channel/Pd - Power Dissipation;425W/RDS(on);6.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.5pF/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;4.3nF/Output Capacitance(Coss);530pF


    150V 160A 425W Through Hole TO-220

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