REASUNOS-Single FETs, MOSFETs-RS30N150T

Description

Drain to Source Voltage;30V/Gate Charge(Qg);67nC@10V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);360pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.64nF/Output Capacitance(Coss);490pF


30V 2.6mΩ@10V 1 N-channel 120W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);67nC@10V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);360pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$3.75 Excl. VAT

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);67nC@10V/Number;1 N-channel/Pd - Power Dissipation;120W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);360pF/Current - Continuous Drain(Id);150A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.64nF/Output Capacitance(Coss);490pF


    30V 2.6mΩ@10V 1 N-channel 120W TO-220 Single FETs, MOSFETs RoHS

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