REASUNOS-Single FETs, MOSFETs-RS30N180T

Description

Drain to Source Voltage;30V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Pd - Power Dissipation;88W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);470pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.06nF/Output Capacitance(Coss);570pF


N-Channel 30V 180A 88W Through Hole TO-220

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Pd - Power Dissipation;88W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);470pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Pd - Power Dissipation;88W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);470pF/Current - Continuous Drain(Id);180A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.06nF/Output Capacitance(Coss);570pF


    N-Channel 30V 180A 88W Through Hole TO-220

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