REASUNOS-Single FETs, MOSFETs-RS3400E

Description

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);52mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);77pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;1.05nF


N-Channel 30V 5.8A 0.35W Surface Mount SOT-23

Product form

Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);52mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);77pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;1.05nFN-Channel... Read more

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    Description

    Drain to Source Voltage;30V/Number;1 N-channel/Pd - Power Dissipation;350mW/RDS(on);52mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);77pF/Current - Continuous Drain(Id);5.8A/Gate Threshold Voltage (Vgs(th));700mV/Ciss-Input Capacitance;1.05nF


    N-Channel 30V 5.8A 0.35W Surface Mount SOT-23

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