REASUNOS-Single FETs, MOSFETs-RS40N200T

Description

Drain to Source Voltage;40V/Gate Charge(Qg);146nC@10V/Number;1 N-channel/Pd - Power Dissipation;200W/RDS(on);2.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);670pF/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;9.56nF/Output Capacitance(Coss);1.1nF


40V 2.3mΩ@10V 1 N-channel 200W TO-220 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);146nC@10V/Number;1 N-channel/Pd - Power Dissipation;200W/RDS(on);2.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);670pF/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);146nC@10V/Number;1 N-channel/Pd - Power Dissipation;200W/RDS(on);2.3mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);670pF/Current - Continuous Drain(Id);200A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;9.56nF/Output Capacitance(Coss);1.1nF


    40V 2.3mΩ@10V 1 N-channel 200W TO-220 Single FETs, MOSFETs RoHS

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