REASUNOS-Single FETs, MOSFETs-RS40N60D

Description

Drain to Source Voltage;40V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;55W/RDS(on);5.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);135pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.44nF/Output Capacitance(Coss);165pF


40V 5.4mΩ@10V 1 N-channel 55W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;55W/RDS(on);5.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);135pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$1.47 Excl. VAT

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;55W/RDS(on);5.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);135pF/Current - Continuous Drain(Id);60A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2.44nF/Output Capacitance(Coss);165pF


    40V 5.4mΩ@10V 1 N-channel 55W TO-252 Single FETs, MOSFETs RoHS

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