REASUNOS-Single FETs, MOSFETs-RS40N80D

Description

Drain to Source Voltage;40V/Gate Charge(Qg);73nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);222pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.76nF/Output Capacitance(Coss);260pF


40V 4.2mΩ@10V 1 N-channel 125W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;40V/Gate Charge(Qg);73nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);222pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;40V/Gate Charge(Qg);73nC@10V/Number;1 N-channel/Pd - Power Dissipation;125W/RDS(on);4.2mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);222pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;3.76nF/Output Capacitance(Coss);260pF


    40V 4.2mΩ@10V 1 N-channel 125W TO-252 Single FETs, MOSFETs RoHS

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