REASUNOS-Single FETs, MOSFETs-RS4435

Description

Drain to Source Voltage;30V/Gate Charge(Qg);30nC@15V/Number;1 P-Channel/Pd - Power Dissipation;3.2W/RDS(on);34mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);216pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.8nF


P-Channel 30V 10A 3.2W Surface Mount SOP-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);30nC@15V/Number;1 P-Channel/Pd - Power Dissipation;3.2W/RDS(on);34mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);216pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);30nC@15V/Number;1 P-Channel/Pd - Power Dissipation;3.2W/RDS(on);34mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);216pF/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.8nF


    P-Channel 30V 10A 3.2W Surface Mount SOP-8

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