REASUNOS-Single FETs, MOSFETs-RS4N80F

Description

Drain to Source Voltage;800V/Gate Charge(Qg);24.5nC@640V/Number;1 N-channel/Pd - Power Dissipation;54W/RDS(on);3.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12.5pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;527pF


N-Channel 800V 4A 54W Through Hole TO-220F

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);24.5nC@640V/Number;1 N-channel/Pd - Power Dissipation;54W/RDS(on);3.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12.5pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$5.13 Excl. VAT

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);24.5nC@640V/Number;1 N-channel/Pd - Power Dissipation;54W/RDS(on);3.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);12.5pF/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;527pF


    N-Channel 800V 4A 54W Through Hole TO-220F

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