REASUNOS-Single FETs, MOSFETs-RS60N160UHT

Description

Drain to Source Voltage;60V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;184W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));3.4V/Ciss-Input Capacitance;3.501nF/Output Capacitance(Coss);1.089nF


60V 2.6mΩ@10V 1 N-channel 184W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;184W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));3.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);56nC@10V/Number;1 N-channel/Pd - Power Dissipation;184W/RDS(on);2.6mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);160A/Gate Threshold Voltage (Vgs(th));3.4V/Ciss-Input Capacitance;3.501nF/Output Capacitance(Coss);1.089nF


    60V 2.6mΩ@10V 1 N-channel 184W TO-220-3 Single FETs, MOSFETs RoHS

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