REASUNOS-Single FETs, MOSFETs-RS60N80UHT

Description

Drain to Source Voltage;60V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Pd - Power Dissipation;167W/RDS(on);4.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);71pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.504nF/Output Capacitance(Coss);924pF


60V 4.9mΩ@10V 1 N-channel 167W TO-220-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Pd - Power Dissipation;167W/RDS(on);4.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);71pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input... Read more

$4.38 Excl. VAT

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Pd - Power Dissipation;167W/RDS(on);4.9mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);71pF/Current - Continuous Drain(Id);80A/Gate Threshold Voltage (Vgs(th));3.6V/Ciss-Input Capacitance;1.504nF/Output Capacitance(Coss);924pF


    60V 4.9mΩ@10V 1 N-channel 167W TO-220-3 Single FETs, MOSFETs RoHS

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