REASUNOS-Single FETs, MOSFETs-RS60R130W

Description

Drain to Source Voltage;600V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Pd - Power Dissipation;162W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.9pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.908nF/Output Capacitance(Coss);129pF


600V 110mΩ@10V 1 N-channel 162W TO-247 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Pd - Power Dissipation;162W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.9pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);50nC@10V/Number;1 N-channel/Pd - Power Dissipation;162W/RDS(on);110mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.9pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.908nF/Output Capacitance(Coss);129pF


    600V 110mΩ@10V 1 N-channel 162W TO-247 Single FETs, MOSFETs RoHS

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