REASUNOS-Single FETs, MOSFETs-RS65R190T

Description

Drain to Source Voltage;650V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;134W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.3pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.49nF


N-Channel 650V 20A 134W Through Hole TO-220

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;134W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.3pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Pd - Power Dissipation;134W/RDS(on);160mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.3pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.49nF


    N-Channel 650V 20A 134W Through Hole TO-220

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