REASUNOS-Single FETs, MOSFETs-RS70R600D

Description

Drain to Source Voltage;700V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;60W/RDS(on);530mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.7pF/Current - Continuous Drain(Id);7.3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;473pF/Output Capacitance(Coss);36pF


700V 530mΩ@10V 1 N-channel 60W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;60W/RDS(on);530mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.7pF/Current - Continuous Drain(Id);7.3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);13nC@10V/Number;1 N-channel/Pd - Power Dissipation;60W/RDS(on);530mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1.7pF/Current - Continuous Drain(Id);7.3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;473pF/Output Capacitance(Coss);36pF


    700V 530mΩ@10V 1 N-channel 60W TO-252 Single FETs, MOSFETs RoHS

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