REASUNOS-Single FETs, MOSFETs-RS7N65BD

Description

Drain to Source Voltage;650V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;95W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.153nF/Output Capacitance(Coss);90pF


650V 1.2Ω@10V 1 N-channel 95W TO-252 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;95W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);21nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;95W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.153nF/Output Capacitance(Coss);90pF


    650V 1.2Ω@10V 1 N-channel 95W TO-252 Single FETs, MOSFETs RoHS

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