REASUNOS-Single FETs, MOSFETs-RS80R500F

Description

Drain to Source Voltage;800V/Gate Charge(Qg);24.6nC@400V/Number;1 N-channel/Pd - Power Dissipation;52W/RDS(on);420mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.099nF


N-Channel 800V 9A 52W Through Hole TO-220F

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);24.6nC@400V/Number;1 N-channel/Pd - Power Dissipation;52W/RDS(on);420mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

$2.76 Excl. VAT

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);24.6nC@400V/Number;1 N-channel/Pd - Power Dissipation;52W/RDS(on);420mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1pF/Current - Continuous Drain(Id);9A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.099nF


    N-Channel 800V 9A 52W Through Hole TO-220F

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