REASUNOS-Single FETs, MOSFETs-RS8N80F

Description

Drain to Source Voltage;800V/Gate Charge(Qg);49nC@640V/Number;1 N-channel/Pd - Power Dissipation;43.8W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);27pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.778nF


N-Channel 800V 8A 43.8W Through Hole TO-220F

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);49nC@640V/Number;1 N-channel/Pd - Power Dissipation;43.8W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);27pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

$1.38 Excl. VAT

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);49nC@640V/Number;1 N-channel/Pd - Power Dissipation;43.8W/RDS(on);1.35Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);27pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;1.778nF


    N-Channel 800V 8A 43.8W Through Hole TO-220F

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