REASUNOS-Single FETs, MOSFETs-RSE80R250F

Description

Drain to Source Voltage;800V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Pd - Power Dissipation;33W/RDS(on);220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.2pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2nF/Output Capacitance(Coss);33pF


N-Channel 800V 18A 33W Through Hole TO-220F

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Pd - Power Dissipation;33W/RDS(on);220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.2pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);43nC@10V/Number;1 N-channel/Pd - Power Dissipation;33W/RDS(on);220mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.2pF/Current - Continuous Drain(Id);18A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;2nF/Output Capacitance(Coss);33pF


    N-Channel 800V 18A 33W Through Hole TO-220F

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