REASUNOS-Single FETs, MOSFETs-RSE80R850D

Description

Drain to Source Voltage;800V/Gate Charge(Qg);13.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;66W/RDS(on);740mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.5pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;635pF


N-Channel 800V 7A 66W Surface Mount TO-252

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);13.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;66W/RDS(on);740mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.5pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

$1.32 Excl. VAT

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);13.7nC@10V/Number;1 N-channel/Pd - Power Dissipation;66W/RDS(on);740mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.5pF/Current - Continuous Drain(Id);7A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;635pF


    N-Channel 800V 7A 66W Surface Mount TO-252

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