REASUNOS-Single FETs, MOSFETs-RSF55R190F

Description

Drain to Source Voltage;550V/Gate Charge(Qg);26nC@10V/Number;1 N-channel/Pd - Power Dissipation;112W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.78pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.046nF/Output Capacitance(Coss);37pF


550V 165mΩ@10V 1 N-channel 112W TO-220F Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;550V/Gate Charge(Qg);26nC@10V/Number;1 N-channel/Pd - Power Dissipation;112W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.78pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;550V/Gate Charge(Qg);26nC@10V/Number;1 N-channel/Pd - Power Dissipation;112W/RDS(on);165mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.78pF/Current - Continuous Drain(Id);20A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.046nF/Output Capacitance(Coss);37pF


    550V 165mΩ@10V 1 N-channel 112W TO-220F Single FETs, MOSFETs RoHS

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