REASUNOS-Single FETs, MOSFETs-RSF65T110F

Description

Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);90mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;2.134nF/Output Capacitance(Coss);68pF


650V 90mΩ@10V 1 N-channel 31W TO-220F Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);90mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);48nC@10V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);90mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));4.5V/Ciss-Input Capacitance;2.134nF/Output Capacitance(Coss);68pF


    650V 90mΩ@10V 1 N-channel 31W TO-220F Single FETs, MOSFETs RoHS

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