REASUNOS-Single FETs, MOSFETs-RSU2N65MD

Description

Drain to Source Voltage;650V/Gate Charge(Qg);3nC@10V/Number;1 N-channel/Pd - Power Dissipation;22W/RDS(on);2.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1pF/Current - Continuous Drain(Id);1.8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;183pF


650V 1.8A 22W Through Hole TO-251

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);3nC@10V/Number;1 N-channel/Pd - Power Dissipation;22W/RDS(on);2.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1pF/Current - Continuous Drain(Id);1.8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);3nC@10V/Number;1 N-channel/Pd - Power Dissipation;22W/RDS(on);2.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);1pF/Current - Continuous Drain(Id);1.8A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;183pF


    650V 1.8A 22W Through Hole TO-251

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