REASUNOS-Single FETs, MOSFETs-RSU5N65F

Description

Drain to Source Voltage;650V/Gate Charge(Qg);10.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;29W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.5pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;370pF


650V 5A 29W Through Hole TO-220F

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);10.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;29W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.5pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);10.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;29W/RDS(on);750mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);0.5pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;370pF


    650V 5A 29W Through Hole TO-220F

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