/Gate Charge(Qg);11.6nC@10V/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);950mΩ@4V/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2V950mΩ@4V 2W Single FETs, MOSFETs RoHS Read more

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