RENESAS-Single FETs, MOSFETs-2SJ624-T1B-AT

Description

Drain to Source Voltage;20V/Gate Charge(Qg);8.1nC@16V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;200mW/RDS(on);108mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);69pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;813pF


20V 108mΩ@1.8V 1 P-Channel 200mW SC-96-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);8.1nC@16V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;200mW/RDS(on);108mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);69pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);8.1nC@16V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;200mW/RDS(on);108mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);69pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;813pF


    20V 108mΩ@1.8V 1 P-Channel 200mW SC-96-3 Single FETs, MOSFETs RoHS

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