Drain to Source Voltage;100V/Gate Charge(Qg);13nC@10V/Type;N-Channel/Pd - Power Dissipation;1W/RDS(on);320mΩ@10V/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));2.5V100V 320mΩ@10V 1W Single FETs, MOSFETs RoHS Read more

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