Drain to Source Voltage;40V/Gate Charge(Qg);50nC@10V/Type;N-Channel/RDS(on);40mΩ@4V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);270pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;1.21nF40V 40mΩ@4V Single FETs,... Read more

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